features 1 of 5 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . rf mems SGA8543Z high ip 3 , medium power discrete sige transistor rfmd?s SGA8543Z is a high performance silicon germanium heterostructure bipo- lar transistor (sige hbt) designed fo r operation from 50mhzto3.5ghz. the SGA8543Z is optimized for 3.3v operation but can be biased at 2.7v for low-volt- age battery operated systems. the device provides low nf and excellent linearity at a low cost. it can be operated over a wide range of currents depending on the power and linearity requirements.the matte tin finish on the lead-free ?z? package is applied using a post annealing process to mitigate tin whisker formation and is rohs compliant per eu directive 2002/ 95. the package body is manufactured with green molding compounds that contain no antimony triox- ide or halogenated fire retardants. typical g max , oip 3 , p 1db @ 3.3v, 86ma 10.0 13.0 16.0 19.0 22.0 25.0 28.0 31.0 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 frequency (ghz) g max (db) 17 20 23 26 29 32 35 38 oip 3 , p 1db (dbm) oip 3 g max p 1db ? .05ghzto3.5ghz operation ? lead free, rohs compliant, and green package ? 1.5db nf mn at 2.44ghz ? 15.6db g max at 2.44ghz ? p 1db =+20.6dbm at 2.44ghz ? oip 3 =+34.6dbm at 2.44ghz ? low cost, high performance, versatility applications ? analog and digital wireless systems ? 3g, cellular, pcs, rfid ? fixed wireless, pager systems ? pa stage for medium power applications ? an-079 contains detailed application circuits ds100809 ? SGA8543Z high ip 3 , medium power discrete sige transistor parameter specification unit condition min. typ. max. power gain 19.0 db 880mhz, z s =z sopt , z l =z lopt 14.0 db 2440mhz output power at 1db compression [2] 20.0 dbm 880mhz, z s =z sopt , z l =z lopt 20.6 dbm 2440mhz output third order intercept point [2] 33.4 dbm 880mhz, z s =z sopt , z l =z lopt 34.6 dbm 2440mhz noise figure 3.1 db 880mhz, z s =z sopt , z l =z lopt 2.4 db 2440mhz minimum noise figure 1.0 db 880mhz, i ce =25ma, z s = opt , z l =z l , nf min 1.5 db 2440mhz maximum available gain 22.9 db 880mhz, z s =z s , z l =z l 15.0 db 2440mhz insertion gain [1] 18.0 db 880mhz d cc current gain 120 180 300 breakdown voltage 5.7 6.0 v collector - emitter device operating voltage 3.8 v collector - emitter device operating current 95 ma collector - emitter thermal resistance 151 c/w junction to backside test conditions: v ce =3.3v, i ce =86ma typ. (unless noted otherwise), t l =25c, oip 3 tone spacing=1mhz, p out per tone=5dbm [1] 100% production tested using 50 contact board (no matching circuitry) [2] data with application circuit
2 of 5 ds100809 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . SGA8543Z typical performance with 2.45ghz application circuit absolute maximum ratings parameter rating unit max device current (l ce )105ma max device voltage (v ce )4.5v max rf input power *(see note) 18 dbm max junction temperature (t j ) 150 c operating temperature range (t l )see graph max storage temperature 150 c esd rating - human body model (hbm) class 1b moisture sensitivity level msl 1 *note: load condition1, z l =50 . load condition2, z l =10:1 vswr. operation of this device beyond any one of these limits may cause permanent dam- age. for reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. bias conditions should also satisfy the following expression: i d v d <(t j -t l )/r th , j-l and t l =t lead freq (mhz) vce (v) ice (ma) p1db (dbm) oip3 (dbm) gain (db) s11 (db) s22 (db) nf (db) zsopt (w) zlopt (w) 880 3.3 86.0 20.0 33.4 19.0 -15.0 -11.0 3.1 22.9-j2.95 29.4+j0.9 2440 3.3 86.0 20.6 34.6 14.0 -16.0 -22.0 2.4 9.3-j9.9 33.6-j4.7 test conditions: v s =5v, i s =96ma typ., oip 3 tone spacing=1mhz, p out per tone=-5dbm, t l =25c caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. rohs status based on eudirective2002/95/ec (at time of this document revision). the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. power derating curve 0.0 0.1 0.2 0.3 0.4 0.5 0.6 -40.0 -10.0 20.0 50.0 80.0 110.0 140.0 170.0 lead temperature (c) total dissipated power (w) operational limit (tj<140c) abs max (tj<150c)
3 of 5 ds100809 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . SGA8543Z s11 versus frequency s22 versus frequency note: s-parameters are de-embedded to the device leads with z s =z l =50 . de-embedded s-parameters can be downloaded from our website (www.rfmd.com) dciv curves (2440 mhz ckt.) 0.0 20.0 40.0 60.0 80.0 100.0 120.0 140.0 160.0 180.0 0.00.51.01.52.02.53.03.54.04.55.0 v ce (volts) i c (ma) insertion gain and isolation (i ce = 86ma) -5.0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 frequency (ghz) gain, g max (db) -45 -40 -35 -30 -25 -20 -15 -10 -5 0 isolation g max gain s11 vs. frequency s22 vs. frequency 3.5 ghz 2.44 ghz 1.96 ghz .88 ghz 5 ghz .2 ghz 6 ghz .1 ghz .05 ghz 8 ghz .5 ghz 3.5 ghz 2.44 ghz 1.96 ghz .88 ghz 5 ghz .2 ghz 6 ghz 8 ghz .5 ghz .1 ghz .05 ghz
4 of 5 ds100809 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . SGA8543Z part identification marking alternate marking with trace code only suggested pad layout 85z 1 2 3 4 trace code
5 of 5 ds100809 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . SGA8543Z package dimensions dimensions in inches (millimeters) refer to drawing posted at www.rfmd.com for tolerances. ordering information pin function description 1rf in rf input / base bias. external dc blocking capacitor required. 2gnd connection to ground. use via holes to reduce lead inductance. place via holes as close to lead as possible. 3rf out rf out / collector bias. external dc blocking capacitor required. 4gnd connection to ground. use via holes to reduce lead inductance. place via holes as close to lead as possible. ordering code description SGA8543Zsq sample bag with 25 pieces SGA8543Zsr 7? reel with 100 pieces SGA8543Z 7? reel with 3000 pieces SGA8543Z-evb1 880mhz pcba with 5-piece sample bag SGA8543Z-evb2 2440mhz pcb with 5-piece sample bag l c 5. die is facing up for mold and facing down 2.25 l c 6. package surface to be mirror finish. for trim/form. ie :reverse trim/form. symbol 4. all specifications comply to eiaj sc70. 2. dimensions are inclusive of plating. 3. dimensions are exclusive of mold flash 1. all dimensions are in millimeters. & metal burr. note: 0.25 0.10 0.10 0.00 0.80 1.80 0.80 1.85 1.15 min b c e q1 a2 a1 he a d e 0.65 bsc 0.40 0.18 0.40 0.10 1.00 2.40 1.10 1.35 max l 0.10 0.30 b1 0.55 0.70 d e he a2 e e b b1 l c q1 a a1 43 12
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